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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MBT3904DW1T1/D Dual General Purpose Transistors The MBT3904DW1T1, MBT3906DW1T1, and MBT3946DW1T1 devices are spin-offs of our popular SOT-23/SOT-323 three-leaded devices. They are designed for general purpose amplifier applications and are housed in the SOT-363 six-leaded surface mount package. By putting two discrete devices in one package, these devices are ideal for low-power surface mount applications where board space is at a premium. * hFE, 100-300 * Low VCE(sat), 0.4 V * Simplifies Circuit Design * Reduces Board Space * Reduces Component Count * Available in 8 mm, 7-inch/3,000 Unit Tape and Reel MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1 MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1 65 4 1 2 3 CASE 419B-01, STYLE 1 MBT3904DW1T1 (3) (2) (1) Q1 Q2 MAXIMUM RATINGS Rating Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) Symbol VCEO VCBO VEBO IC 200 -200 (4) (5) (6) Value 40 -40 60 -40 6.0 -5.0 Unit Vdc Vdc (3) (4) (5) (6) MBT3906DW1T1 (2) (1) Vdc mAdc Q1 Q2 Collector Current -- Continuous MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) THERMAL CHARACTERISTICS Characteristic Total Package Dissipation(1) TA = 25C Thermal Resistance Junction to Ambient Junction and Storage Temperature Symbol PD RqJA TJ, Tstg Max 150 833 - 55 to +150 Unit mW C/W C Q1 Q2 (3) MBT3946DW1T1* (2) (1) 1. Device mounted on FR4 glass epoxy printed circuit board using the minimum 1. recommended footprint. (4) (5) (6) DEVICE MARKING MBT3904DW1T1 = MA MBT3946DW1T1 = 46 MBT3906DW1T1 = A2 Thermal Clad is a trademark of the Bergquist Company. *Q1 same as MBT3906DW1T1 Q2 same as MBT3904DW1T1 (c) Motorola, Small-Signal Transistors, FETs and Diodes Device Data Motorola Inc. 1996 1 MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage(2) (IC = 1.0 mAdc, IB = 0) (IC = -1.0 mAdc, IB = 0) Collector - Base Breakdown Voltage (IC = 10 mAdc, IE = 0) (IC = -10 mAdc, IE = 0) Emitter - Base Breakdown Voltage (IE = 10 mAdc, IC = 0) (IE = -10 mAdc, IC = 0) Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) (VCE = -30 Vdc, VEB = -3.0 Vdc) Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) (VCE = -30 Vdc, VEB = -3.0 Vdc) V(BR)CEO MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) V(BR)CBO MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) V(BR)EBO MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) IBL MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) ICEX MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) -- -- 50 -50 -- -- 50 -50 nAdc 6.0 -5.0 -- -- nAdc 60 -40 -- -- Vdc 40 -40 -- -- Vdc Vdc ON CHARACTERISTICS (2) DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) (IC = -0.1 mAdc, VCE = -1.0 Vdc) (IC = -1.0 mAdc, VCE = -1.0 Vdc) (IC = -10 mAdc, VCE = -1.0 Vdc) (IC = -50 mAdc, VCE = -1.0 Vdc) (IC = -100 mAdc, VCE = -1.0 Vdc) Collector - Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) (IC = -10 mAdc, IB = -1.0 mAdc) (IC = -50 mAdc, IB = -5.0 mAdc) Base - Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) (IC = -10 mAdc, IB = -1.0 mAdc) (IC = -50 mAdc, IB = -5.0 mAdc) hFE MBT3904DW1T1 (NPN) 40 70 100 60 30 60 80 100 60 30 VCE(sat) MBT3904DW1T1 (NPN) -- -- -- -- VBE(sat) MBT3904DW1T1 (NPN) 0.65 -- -0.65 -- 0.85 0.95 -0.85 -0.95 0.2 0.3 -0.25 -0.4 Vdc -- -- 300 -- -- -- -- 300 -- -- Vdc -- MBT3906DW1T1 (PNP) MBT3906DW1T1 (PNP) MBT3906DW1T1 (PNP) SMALL- SIGNAL CHARACTERISTICS Current - Gain -- Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) (IC = -10 mAdc, VCE = -20 Vdc, f = 100 MHz) Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) (VCB = -5.0 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) (VEB = -0.5 Vdc, IC = 0, f = 1.0 MHz) 2. Pulse Test: Pulse Width 300 s; Duty Cycle 2.0%. fT MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) Cobo MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) Cibo MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) -- -- 8.0 10.0 -- -- 4.0 4.5 pF 300 250 -- -- pF MHz 2 Motorola Small-Signal Transistors, FETs and Diodes Device Data MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Input Impedance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (VCE = -10 Vdc, IC = -1.0 mAdc, f = 1.0 kHz) Voltage Feedback Ratio (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (VCE = -10 Vdc, IC = -1.0 mAdc, f = 1.0 kHz) Small - Signal Current Gain (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (VCE = -10 Vdc, IC = -1.0 mAdc, f = 1.0 kHz) Output Admittance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (VCE = -10 Vdc, IC = -1.0 mAdc, f = 1.0 kHz) MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) hre MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) hfe MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) hoe MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) NF -- -- 5.0 4.0 1.0 3.0 40 60 dB 100 100 400 400 0.5 0.1 8.0 10 -- Symbol hie 1.0 2.0 10 12 X 10- 4 Min Max Unit k mmhos Noise Figure (VCE = 5.0 Vdc, IC = 100 mAdc, RS = 1.0 k , f = 1.0 kHz) MBT3904DW1T1 (NPN) (VCE = -5.0 Vdc, IC = -100 mAdc, RS = 1.0 k , f = 1.0 kHz) MBT3906DW1T1 (PNP) SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time (VCC = 3.0 Vdc, VBE = - 0.5 Vdc) (VCC = -3.0 Vdc, VBE = 0.5 Vdc) (IC = 10 mAdc, IB1 = 1.0 mAdc) (IC = -10 mAdc, IB1 = -1.0 mAdc) (VCC = 3.0 Vdc, IC = 10 mAdc) (VCC = -3.0 Vdc, IC = -10 mAdc) (IB1 = IB2 = 1.0 mAdc) (IB1 = IB2 = -1.0 mAdc) MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) td tr ts tf -- -- -- -- -- -- -- -- 35 35 ns 35 35 200 225 ns 50 75 Motorola Small-Signal Transistors, FETs and Diodes Device Data 3 MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1 MBT3904DW1T1 (NPN) DUTY CYCLE = 2% 300 ns +3 V +10.9 V 10 k 275 10 < t1 < 500 ms DUTY CYCLE = 2% t1 +3 V +10.9 V 275 10 k 0 - 0.5 V < 1 ns Cs < 4 pF* - 9.1 V < 1 ns 1N916 Cs < 4 pF* * Total shunt capacitance of test jig and connectors Figure 1. Delay and Rise Time Equivalent Test Circuit Figure 2. Storage and Fall Time Equivalent Test Circuit TYPICAL TRANSIENT CHARACTERISTICS TJ = 25C TJ = 125C 10 7.0 CAPACITANCE (pF) 5.0 Cibo 3.0 2.0 Cobo MBT3904DW1T1 (NPN) 5000 3000 2000 Q, CHARGE (pC) 1000 700 500 300 200 100 70 50 QT QA VCC = 40 V IC/IB = 10 MBT3904DW1T1 (NPN) 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 REVERSE BIAS VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA) Figure 3. Capacitance Figure 4. Charge Data 4 Motorola Small-Signal Transistors, FETs and Diodes Device Data MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1 MBT3904DW1T1 (NPN) 500 300 200 100 70 50 30 20 10 7 5 MBT3904DW1T1 (NPN) td @ VOB = 0 V 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 V 15 V 10 2.0 V 50 70 100 200 7 5 MBT3904DW1T1 (NPN) 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC/IB = 10 500 300 200 t r, RISE TIME (ns) 100 70 50 30 20 VCC = 40 V IC/IB = 10 TIME (ns) tr @ VCC = 3.0 V IC, COLLECTOR CURRENT (mA) Figure 5. Turn - On Time 500 300 200 t s, STORAGE TIME (ns) 100 70 50 30 20 10 7 5 MBT3904DW1T1 (NPN) 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC/IB = 20 IC/IB = 10 IC/IB = 20 IC/IB = 10 500 300 200 Figure 6. Rise Time ts = ts - 1/8 tf IB1 = IB2 t f , FALL TIME (ns) VCC = 40 V IB1 = IB2 IC/IB = 20 100 70 50 30 20 10 7 5 IC/IB = 10 MBT3904DW1T1 (NPN) 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 7. Storage Time Figure 8. Fall Time TYPICAL AUDIO SMALL- SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (VCE = 5.0 Vdc, TA = 25C, Bandwidth = 1.0 Hz) 12 10 NF, NOISE FIGURE (dB) 8 6 4 2 SOURCE RESISTANCE = 500 W IC = 100 mA 0.2 0.4 1.0 2.0 4.0 SOURCE RESISTANCE = 200 W IC = 1.0 mA SOURCE RESISTANCE = 200 W IC = 0.5 mA SOURCE RESISTANCE = 1.0 k IC = 50 mA NF, NOISE FIGURE (dB) 14 f = 1.0 kHz 12 10 8 6 4 2 0 0.1 0.2 0.4 1.0 2.0 4.0 MBT3904DW1T1 (NPN) 10 20 40 100 IC = 100 mA IC = 1.0 mA IC = 0.5 mA IC = 50 mA MBT3904DW1T1 (NPN) 10 20 40 100 0 0.1 f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (k OHMS) Figure 9. Noise Figure Motorola Small-Signal Transistors, FETs and Diodes Device Data Figure 10. Noise Figure 5 MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1 MBT3904DW1T1 (NPN) h PARAMETERS (VCE = 10 Vdc, f = 1.0 kHz, TA = 25C) 300 MBT3904DW1T1 (NPN) h fe , CURRENT GAIN 200 hoe, OUTPUT ADMITTANCE (m mhos) 100 50 MBT3904DW1T1 (NPN) 20 10 5 100 70 50 2 1 30 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 10 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 10 Figure 11. Current Gain hre , VOLTAGE FEEDBACK RATIO (x 10 -4) 20 h ie , INPUT IMPEDANCE (k OHMS) 10 5.0 MBT3904DW1T1 (NPN) 10 7.0 5.0 3.0 2.0 Figure 12. Output Admittance MBT3904DW1T1 (NPN) 2.0 1.0 0.5 1.0 0.7 0.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 10 0.2 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 10 Figure 13. Input Impedance Figure 14. Voltage Feedback Ratio 6 Motorola Small-Signal Transistors, FETs and Diodes Device Data MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1 MBT3904DW1T1 (NPN) TYPICAL STATIC CHARACTERISTICS h FE, DC CURRENT GAIN (NORMALIZED) 2.0 TJ = +125C 1.0 0.7 0.5 0.3 0.2 - 55C +25C MBT3904DW1T1 (NPN) VCE = 1.0 V 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) Figure 15. DC Current Gain VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) 1.0 MBT3904DW1T1 (NPN) 0.8 IC = 1.0 mA 10 mA 30 mA 100 mA TJ = 25C 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA) Figure 16. Collector Saturation Region 1.2 TJ = 25C 1.0 V, VOLTAGE (VOLTS) 0.8 VBE @ VCE =1.0 V 0.6 0.4 VCE(sat) @ IC/IB =10 0.2 0 MBT3904DW1T1 (NPN) VBE(sat) @ IC/IB =10 COEFFICIENT (mV/ C) 1.0 MBT3904DW1T1 (NPN) 0.5 +25C TO +125C qVC FOR VCE(sat) 0 - 0.5 - 55C TO +25C - 1.0 +25C TO +125C - 1.5 - 2.0 - 55C TO +25C qVB FOR VBE(sat) 1.0 2.0 5.0 10 20 50 100 200 0 20 40 60 80 100 120 140 160 180 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 17. "ON" Voltages Figure 18. Temperature Coefficients Motorola Small-Signal Transistors, FETs and Diodes Device Data 7 MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1 MBT3906DW1T1 (PNP) 3V +9.1 V 275 < 1 ns +0.5 V 10 k 0 Cs < 4 pF* 10.6 V 300 ns DUTY CYCLE = 2% 10 < t1 < 500 ms DUTY CYCLE = 2% t1 10.9 V 1N916 10 k < 1 ns 3V 275 Cs < 4 pF* * Total shunt capacitance of test jig and connectors Figure 19. Delay and Rise Time Equivalent Test Circuit Figure 20. Storage and Fall Time Equivalent Test Circuit TYPICAL TRANSIENT CHARACTERISTICS TJ = 25C TJ = 125C 10 7.0 CAPACITANCE (pF) 5.0 Cobo Cibo 3.0 2.0 MBT3906DW1T1 (PNP) 5000 3000 2000 Q, CHARGE (pC) 1000 700 500 300 200 100 70 50 VCC = 40 V IC/IB = 10 MBT3906DW1T1 (PNP) QT QA 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE BIAS (VOLTS) 20 30 40 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 200 Figure 21. Capacitance 500 300 200 100 70 50 30 20 10 7 5 MBT3906DW1T1 (PNP) IC/IB = 10 500 300 200 t f , FALL TIME (ns) 100 70 50 30 20 10 7 5 Figure 22. Charge Data MBT3906DW1T1 (PNP) IC/IB = 20 VCC = 40 V IB1 = IB2 TIME (ns) tr @ VCC = 3.0 V 15 V 40 V 2.0 V td @ VOB = 0 V 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) IC/IB = 10 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) Figure 23. Turn - On Time Figure 24. Fall Time 8 Motorola Small-Signal Transistors, FETs and Diodes Device Data MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1 MBT3906DW1T1 (PNP) TYPICAL AUDIO SMALL- SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (VCE = - 5.0 Vdc, TA = 25C, Bandwidth = 1.0 Hz) 5.0 SOURCE RESISTANCE = 200 W IC = 1.0 mA NF, NOISE FIGURE (dB) SOURCE RESISTANCE = 200 W IC = 0.5 mA SOURCE RESISTANCE = 2.0 k IC = 50 mA 12 f = 1.0 kHz 10 IC = 0.5 mA 8 6 4 2 MBT3906DW1T1 (PNP) 20 40 100 0 0.1 0.2 IC = 50 mA IC = 100 mA MBT3906DW1T1 (PNP) 0.4 1.0 2.0 4.0 10 20 Rg, SOURCE RESISTANCE (k OHMS) 40 100 IC = 1.0 mA NF, NOISE FIGURE (dB) 4.0 3.0 2.0 SOURCE RESISTANCE = 2.0 k IC = 100 mA 0.2 0.4 1.0 0 0.1 1.0 2.0 4.0 10 f, FREQUENCY (kHz) Figure 25. Figure 26. h PARAMETERS (VCE = - 10 Vdc, f = 1.0 kHz, TA = 25C) 300 hoe, OUTPUT ADMITTANCE (m mhos) MBT3906DW1T1 (PNP) h fe , DC CURRENT GAIN 200 100 70 50 30 20 MBT3906DW1T1 (PNP) 100 70 50 10 7 30 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 7.0 10 5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 7.0 10 Figure 27. Current Gain hre , VOLTAGE FEEDBACK RATIO (x 10 -4) 20 h ie , INPUT IMPEDANCE (k OHMS) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 MBT3906DW1T1 (PNP) 10 7.0 5.0 3.0 2.0 Figure 28. Output Admittance MBT3906DW1T1 (PNP) 1.0 0.7 0.5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 7.0 10 Figure 29. Input Impedance Motorola Small-Signal Transistors, FETs and Diodes Device Data Figure 30. Voltage Feedback Ratio 9 MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1 MBT3906DW1T1 (PNP) TYPICAL STATIC CHARACTERISTICS h FE, DC CURRENT GAIN (NORMALIZED) 2.0 TJ = +125C 1.0 0.7 0.5 0.3 MBT3906DW1T1 (PNP) 0.2 - 55C +25C VCE = 1.0 V 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) 20 30 50 70 100 200 Figure 31. DC Current Gain VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) 1.0 MBT3906DW1T1 (PNP) 0.8 IC = 1.0 mA 10 mA 30 mA TJ = 25C 100 mA 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 IB, BASE CURRENT (mA) 0.7 1.0 2.0 3.0 5.0 7.0 10 Figure 32. Collector Saturation Region q V , TEMPERATURE COEFFICIENTS (mV/ C) 1.0 TJ = 25C 0.8 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 10 VBE @ VCE = 1.0 V 1.0 0.5 0 - 0.5 - 1.0 - 55C TO +25C - 1.5 - 2.0 MBT3906DW1T1 (PNP) +25C TO +125C qVC FOR VCE(sat) +25C TO +125C 0.6 MBT3906DW1T1 (PNP) 0.4 VCE(sat) @ IC/IB = 10 - 55C TO +25C 0.2 qVB FOR VBE(sat) 0 1.0 2.0 50 5.0 10 20 IC, COLLECTOR CURRENT (mA) 100 200 0 20 40 60 80 100 120 140 IC, COLLECTOR CURRENT (mA) 160 180 200 Figure 33. "ON" Voltages Figure 34. Temperature Coefficients 10 Motorola Small-Signal Transistors, FETs and Diodes Device Data MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1 INFORMATION FOR USING THE SOT-363 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. SOT-363 0.5 mm (min) 1.9 mm SOT-363 POWER DISSIPATION The power dissipation of the SOT-363 is a function of the pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA . Using the values provided on the data sheet for the SOT-363 package, PD can be calculated as follows: PD = TJ(max) - TA RJA The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25C, one can calculate the power dissipation of the device which in this case is 150 milliwatts. PD = 150C - 25C 833C/W = 150 milliwatts The 833C/W for the SOT-363 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 150 milliwatts. There are other alternatives to achieving higher power dissipation from the SOT-363 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal CladTM. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint. The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. * Always preheat the device. * The delta temperature between the preheat and soldering should be 100C or less.* * When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10C. * The soldering temperature and time shall not exceed 260C for more than 10 seconds. * When shifting from preheating to soldering, the maximum temperature gradient shall be 5C or less. * After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. * Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. Motorola Small-Signal Transistors, FETs and Diodes Device Data EEE EEE EEE EEE EEE EEE EEE EEE EEE EEE EEE EEE EEE EEE EEE EEE 0.4 mm (min) SOLDERING PRECAUTIONS 0.65 mm 0.65 mm 11 MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1 PACKAGE DIMENSIONS A G V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 6 5 4 S 1 2 3 -B- D 6 PL 0.2 (0.008) M B M N J C DIM A B C D G H J K N S V INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC --- 0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 0.012 0.016 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC --- 0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 0.30 0.40 STYLE 1: PIN 1. 2. 3. 4. 5. 6. EMITTER 2 BASE 2 COLLECTOR 1 EMITTER 1 BASE 1 COLLECTOR 2 H K CASE 419B-01 ISSUE C Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA/EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 12 MBT3904DW1T1/D Motorola Small-Signal Transistors, FETs and Diodes Device Data *MBT3904DW1T1/D* |
Price & Availability of MBT3904DW1T1D
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